TIC126A_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
Notes:
1.
2.
3.
4.
5.
6.
These values apply when the gate-cathode resistance R_GK = 1kΩ
These values apply for continuous dc operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
This value may be applied continuously under single phase 50 Hz half-sine-wave
operation with resistive load. Above 70°C derate linearly to zero at 110°C.
This value applies for one 50 Hz half-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
This value applies for a maximum averaging time of 20 ms.
This parameters must be measured using pulse techniques, t_W = 300µs, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts, are located within
3.2mm (1/8 inch) from de device body.
MECHANICAL DATA CASE TO-220
30/10/2012
COMSET SEMICONDUCTORS
3|4