BDY26 Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
V_CE(SAT)
V_(BR)CBO
V_BE(SAT)
h_21E
f_T
t_d + t_r
t_s + t_f
Collector-Emitter saturation
BDY26, 183T2 -
Voltage (*)
I_C=2.0 A, I_B=0.25 A _{BDY27, 184T2 -}
-
- 0.6 V
BDY28, 185T2 - -
Collector-Base Breakdown
Voltage (*)
I_C=3 mA
BDY26, 183T2 300 - -
BDY27, 184T2 400 -
-
V
BDY28, 185T2 500 -
-
BDY26, 183T2 - -
Base-Emitter Voltage (*)
I_C=2.0 A, I_B=0.25 A ^{BDY27, 184T2 -}
BDY28, 185T2 -
- _{1.2 V}
-
Static Forward Current
transfer ratio (*)
V_CE=4 V, I_C=1 A
V_CE=4 V, I_C=2 A
A
- 55 -
B
- 65 -
C
A
- 90 -
15 20 45
-
B
30 45 90
C
75 82 180
Transition Frequency
BDY26, 183T2
V_CE=15 V, I_C=0.5 A,
f=10 MHz
BDY27, 184T2
10
-
BDY28, 185T2
- MHz
Turn-on time
I_C=5 A,
I_B=1 A
BDY26, 183T2
BDY27, 184T2 - - 1 µs
BDY28, 185T2
Turn-off time
I_C=5 A,
I_B1=1 A,
I_B2=-1 A
A
2
B
- - 3.5 µs
C
6
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
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