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BDX66 Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – PNP SILICON DARLINGTONS
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BDX 66, A, B, C
Symbol
Ratings
-IEBO
Emitter Cutoff Current
Test Condition(s)
Min
-VBE=5 V
BDX66
BDX66A
BDX66B
-
BDX66C
Typ
M
x
Unit
- 5.0 mA
TCASE=25°C, -VCB=60 V
-
BDX66
TCASE=200°C, -VCB=40 V
-
-1
-5
-ICBO
Collector-Base Cutoff
Current
TCASE=25°C, -VCB=50 V
-
BDX66A
TCASE=200°C,-VCB=80 V
-
TCASE=25°C, -VCB=100 V
-
BDX66B
TCASE=200°C, -VCB=60 V
-
-1
-5
mA
-1
-5
hFE
hFE
hFE
-VCE(SAT)
-VBE
VF
C22b
ton
TCASE=25°C, -VCB=120 V
-
BDX66C
TCASE=200°C, -VCB=70 V
-
-1
-
5
DC Current Gain
DC Current Gain
DC Current Gain
-VCE=3 V,- IC=1 A
-VCE=3 V,- IC=10 A
-VCE=3 V,- IC=16 A
Collector-Emitter saturation
Voltage (*)
-IC=10 A, -IB=40 mA
Base-Emitter Voltage(1&2) -VCE=3 V, -IC=10 A
Diode forward voltage
IF=10 A
IE=0 A, -VCB=-10V, f=1
MHz
Switching characteristics
VCC=12V, -IC=10 A, -IB1=
IB2=40 mA
- 2000 -
1000 - - -
- 1000 -
BDX66
BDX66A
BDX66B
-
- 2V
BDX66C
-
- 2,5 V
-
2-V
BDX66
BDX66A
BDX66B
-
BDX66C
300 - pF
BDX66
BDX66A
-
1 - µs
COMSET SEMICONDUCTORS
3/4
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