BDX34 Datasheet, PDF (3/4 Pages) Power Innovations Ltd – Transistor de puissance PNP darlington

PNP BDX34 – BDX34A – BDX34B – BDX34C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
V_CBO=-45 V
T_C=100°C
BDX34
-
-
V_CBO=-60 V
I_CBO
Collector-Base Cutoff
Current
T_C=100°C
V_CBO=-80 V
T_C=100°C
BDX34A -
BDX34B -
-
-5 mA
-
V_CBO=-100 V
T_C=100°C
BDX34C -
-
BDX34
I_C=-4.0 A, I_B=-8.0 mA
BDX34A
BDX34B
-
V_CE(SAT)
Collector-Emitter
saturation Voltage (*)
BDX34C
BDX34
- -2.5
V
I_C=-3.0 A, I_B=-6.0 mA
BDX34A
BDX34B
-
- -2.5
BDX34C
BDX34
V_F
Forward Voltage (pulse
method)
I_F=-8 A
BDX34A
BDX34B
-
- 4.0 V
BDX34C
V_BE
Base-Emitter Voltage (*) ^{IC=-4.0 A, VCE=-3.0V}
BDX34
BDX34A
-
I_C=-3.0 A, V_CE=-3.0V
BDX34B
BDX34C
-
- -2.5
V
- -2.5
h_FE
DC Current Gain (*)
V_CE=-3.0 V, I_C=-4.0 A
BDX34
BDX34A
750
-
V_CE=-3.0 V, I_C=-3.0 A
BDX34B
BDX34C
750
-
-
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
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