BD181 Datasheet, PDF (3/3 Pages) General Semiconductor – HIGH-POWER SILICON NPN TRANSISTORS

BD181 – BD182 – BD183
Symbol
Ratings
Collector-Emitter
f_hfe
Breakdown Voltage (*)
h_FE
Static forward current
transfer ratio (*)
Test Condition(s)
Min Typ Mx Unit
V_CE=4.0 V, I_C=3.0 A
V_CE=4.0 V, I_C=3.0 A
V_CE=4.0 V, I_C=4.0 A
V_CE=4.0 V, I_C=3.0 A
BD181
BD182
BD183
BD181
BD182
BD183
15 - - kHz
20 - 70
20 - 70 -
20 - 70
For PNP types current and voltage values are negative
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
COMSET SEMICONDUCTORS
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