2N6285 Datasheet, PDF (3/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

2N6285 – 2N6286 – 2N6287
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
V_CE= -3 V, I_C= -10 A
h_FE
DC Current Gain (*)
V_CE= -3 V, I_C= -20 A
C_OB
Output Capacitance
I_E= 0 A, V_CB= -10V
f= 1MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
2N6285
2N6286 750
2N6287
2N6285
2N6286 100
2N6287
2N6285
2N6286 -
2N6287
- ₁₈₀₀₀
-
-
-
- 400 pF
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min max
A
11 13.10
B
0.97 1.15
C
1.5 1.65
D
8.32 8.92
F
19 20
G
10.70 11.1
N
16.50 17.20
P
25 26
R
4 4.09
U
38.50 39.30
V
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
04/12/2012
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