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| TIP105 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS | |||
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SEMICONDUCTORS
PNP TIP105-106-107
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-case
RthJ-amb
From junction-case
From junction-ambient
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
1.56
62.5
Unit
°C/W
°C/W
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
TIP105
ICBO
Collector Cutoff Current IE= 0,VCB = -VCBOmax TIP106 -
-
TIP107
ICEO
Collector Cutoff Current
IE= 0,
VCE = -1/2 VCEOmax
TIP105
TIP106
TIP107
-
-
TIP105
IEBO
Emitter Cutoff Current VEB= -5 V, IC= 0
TIP106 -
-
TIP107
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= -30 mA, IB= 0
TIP105 -60 -
TIP106 -80 -
TIP107 -100 -
TIP105
IC= -3 A, IB= -6 mA
TIP106 -
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
TIP107
TIP105
IC= -8 A, IB= -80 mA TIP106 -
-
TIP107
VBE(on)
Base-Emitter Voltage
(*)
IC= -8 A, VCE= -4 V
TIP105
TIP106 -
TIP107
-
TIP105
VCE= -4 V, IC= -3 A
TIP106 1000 -
hFE
DC Current Gain (*)
TIP107
TIP105
VCE= -4 V, IC= -8 A
TIP106 200 -
TIP107
COB
Output Capacitance
IE= 0, VCB = -10 V,
f = 1MHz
TIP105
TIP106 -
TIP107
-
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
-50 µA
-50 µA
-8 mA
-
-
V
-
-2
V
-2.5
-2.8 V
20k
-
-
300 pF
04/10/2012
COMSET SEMICONDUCTORS
2|3
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