TIC246B Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
THERMAL CHARACTERISTICS
Symbol
R_∂JC
R_∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
Value
≤ 1.9
≤ 62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
I_DRM
Repetitive peak off-
state current
V_D = Rated V_DRM, , I_G = 0,
T_C = 110°C
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
I_GT
Gate trigger current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_GT
Gate trigger voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, I_G = 0,
I_H
Holding current
initiating I_TM = 100 mA
V_supply = -12 V†, I_G = 0,
initiating I_TM = -100 mA
I_L
V_TM
dv/dt
di/dt
Latching current
Peak on-state voltage
Critical rate of rise of
off-state voltage
Critical rate of rise of
off-state current
V_supply = +12 V† (seeNote5)
V_supply = -12 V† (seeNote5)
I_TM = ± 22.5 A, I_G = 50 mA (see Note4)
V_DRM = Rated V_DRM, I_G = 0
T_C = 110°C
V_DRM = Rated V_DRM, I_GT = 50 mA,
di_G/dt = 50mA/µs, T_C = 110°C
dv/dt_©
Critical rise of
V_DRM = Rated V_DRM, I_T = 1.4 I_T(RMS)
communication voltage di/dt = 0.5 I_T(RMS) /ms, T_C = 80°C
† All voltages are whit respect to Main Terminal 1.
-
-
- 12
- -19
- -16
- 34
- 0.8
- -0.8
- -0.8
- 0.9
- 22
- -22
-
-
-
-
- ±1.4
- ±400
- ±100
±1.2 ±9
±2
50
-50
-50
-
2
-2
-2
2
40
-40
80
-80
±1.7
-
-
-
mA
mA
V
mA
mA
V
V/µs
A/µs
V/µs
Note 4: This parameters must be measured using pulse techniques, t_W = ≤1ms, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body.
Note 5: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : R_G = 100Ω, _tp(g) = 20 µs, t_r = ≤ 15ns, f = 1 kHz.
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