TIC236A Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON TRIACS

SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M,
TIC236N, TIC236S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I_DRM
I_GT
V_GT
I_H
I_L
V_TM
dv/dt
di/dt
dv/dt_©
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
Holding current
V_D = Rated V_DRM, , I_G = 0
T_C = 110°C
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, I_G = 0
initiating I_TM = 100 mA
V_supply = -12 V†, I_G = 0
initiating I_TM = -100 mA
Latching current
V_supply = +12 V† (seeNote5)
V_supply = -12 V† (seeNote5)
Peak on-state
voltage
I_TM = ± 17 A, I_G = 50 mA (see Note4)
Critical rate of rise V_DRM = Rated V_DRM, I_G = 0
of off-state voltage T_C = 110°C
Critical rate of rise V_DRM = Rated V_DRM, I_GT = 50 mA,
of off-state current di_G/dt = 50mA/µs, T_C = 110°C
Critical rise of
communication
voltage
V_DRM = Rated V_DRM, I_T = 1.4 I_T(RMS)
di/dt = 0.5 I_T(RMS) /ms, T_C = 80°C
-
-
- 12
- -19
- -16
- 34
- 0.8
- -0.8
- -0.8
- 0.9
- 22
- -22
-
-
-
-
- ±1.4
- ±400
- ±100
±1.2 ±9
±2
50
-50
-50
-
2
-2
-2
2
40
-40
80
-80
±1.7
-
-
-
mA
mA
V
mA
mA
V
V/µs
A/µs
V/µs
† All voltages are whit respect to Main Terminal 1.
Note1: These values apply bidirectionally for any value of resistance between the gate and Main
Terminal 1.
Note2: This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C
derate linearly to 110°C case temperature at the rate of 300 mA/°C.
Note3: This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
Note4: This parameters must be measured using pulse techniques, t_W = ≤1ms, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts are located within
3.2mm from de device body.
Note5: he triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : R_G = 100Ω, _tp(g) = 20 µs, t_r = ≤ 15ns, f = 1 kHz.
02/10/2012
COMSET SEMICONDUCTORS
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