TIC225A Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,
TIC225N, TIC225S
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 200 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
THERMAL CHARACTERISTICS
Symbol
R_∂JC
R_∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
ELECTRICAL CHARACTERISTICS
Value
≤ 2.5
≤ 62.5
Unit
°C/W
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
I_DRM
Repetitive peak off-
state current
V_D = Rated V_DRM, , I_G = 0,
T_C = 110°C
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
I_GT
Gate trigger current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_GT
Gate trigger voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, I_G = 0,
I_H
Holding current
initiating I_TM = 100 mA
V_supply = -12 V†, I_G = 0,
initiating I_TM = -100 mA
I_L
V_TM
dv/dt
Latching current
Peak on-state voltage
Critical rate of rise of
off-state voltage
V_supply = +12 V† (seeNote7)
V_supply = -12 V† (seeNote7)
I_TM = ± 12 A, I_G = 50 mA (see Note6)
V_DRM = Rated V_DRM, I_G = 0
T_C = 110°C
dv/dt_©
Critical rise of
V_DRM = Rated V_DRM, I_TRM = ± 12A
communication voltage T_C = 70°C
† All voltages are whit respect to Main Terminal 1.
-
- ±2 mA
- 0.8 5
-
-
-4.5
-3.5
-20
-10
mA
- 11.7 30
- 0.7 2
- -0.8 -2
- -0.8 -2
V
- 0.9 2
-
3 20
mA
- -4.7 -20
-
-
-
-
30
-30
mA
- ±1.6 ±2.1 V
- ±50
-
V/µs
±1 ±1.5 ±4.5
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