TIC216A_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON TRIACS

SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
Test Condition(s)
Min Typ Max Unit
I_DRM
Repetitive peak V_D = Rated V_DRM, , I_G = 0
off-state current T_C = 110°C
-
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs -
I_GT
Gate trigger
current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs -
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs -
V_GT
Gate trigger
voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs -
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
V_supply = +12 V†, I_G = 0
I_H
Holding current
initiating I_TM = 100 mA
V_supply = -12 V†, I_G = 0
initiating I_TM = -100 mA
-
-
I_L
Latching current
V_supply = +12 V† (seeNote7)
V_supply = -12 V† (seeNote7)
-
-
V_TM
Peak on-state
voltage
I_TM = ± 8.4 A, I_G = 50 mA (see Note6)
-
dv/dt
Critical rate of
rise of off-state
voltage
V_DRM = Rated V_DRM, I_G = 0
T_C = 110°C
-
dv/dt_©
Critical rise of
communication
voltage
V_DRM = Rated V_DRM, I_TRM = ± 8.4A
T_C = 70°C
±5
† All voltages are whit respect to Main Terminal 1.
- ±2 mA
-
5
-
-
-5
-5
mA
- 10
- 2.2
-
-
-2.2
-2.2
V
-
3
- 30
mA
- -30
50
-20
-
-
mA
- ±1.7 V
±50 -
V/µs
-
-
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly
to 110°C case temperature at the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, t_W = ≤1µs, duty cycle ≤ 2 %, voltage-
sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8
inch) from de device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : R_G = 100Ω, t_p(g) = 20 µs, t_r = ≤ 15ns, f = 1 kHz.
30/10/2012
COMSET SEMICONDUCTORS
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