TIC106A Datasheet, PDF (2/3 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
THERMAL CHARACTERISTICS
Symbol
t_gt
t_q
R_∂JC
R_∂JA
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
Ratings
V_AA = 30 V, R_L = 6 Ω, R_GK(eff) = 5 kΩ,
V_in = 50 V
V_AA = 30 V, R_L = 6 Ω, I_RM ≈ 8 A
Value
1.75
7.7
≤ 3.5
≤ 62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
I_DRM
I_RRM
I_GT
V_GT
I_H
V_TM
dv/dt
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state voltage
Critical rate of rise of off-state
voltage
V_D = Rated V_DRM, R_GK = 1 kΩ,
T_C = 110°C
-
- 400 µA
V_R = Rated V_RRM, I_G = 0,
T_C = 110°C
- - 1 mA
V_AA = 6 V, R_L = 100 Ω,
t_p(g) ≥ 20µs
- 60 200 µA
V_AA = 6 V, R_L = 100 Ω,
R_GK = 1 kΩ, t_p(g) ≥ 20µs,
- - 1.2
T_C = -40°C
V_AA = 6 V, R_L = 100 Ω,
R_GK = 1 kΩ, t_p(g) ≥ 20µs,
0.4 0.6 1
V
V_AA = 6 V, R_L = 100 Ω,
R_GK = 1 kΩ, t_p(g) ≥ 20µs,
0.2 - -
T_C = 110°C
V_AA = 6 V, R_GK = 1 kΩ,
initiating I_T = 10 mA
-
V_AA = 6 V, R_GK = 1 kΩ,
initiating I_T = 10 mA,
-
T_C = -40°C
I_TM = 5A (see Note6)
-
-5
mA
-8
- 1.7 V
V_D = Rated V_D, R_GK = 1 kΩ,
T_C = 110°C
- 10 - V/µs
Note 6:
This parameters must be measured using pulse techniques, t_W = 300µs, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
Page 2 of 3