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BUX40_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
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NPN BUX40
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
VEB0
ICEO
ICEX
IEBO
hFE
VCE(SAT)
VBE(SAT)
IS/B
ES/B
fT
ton
ts
tf
Collector-Emitter Sustaining
Voltage (*)
IC=200 mA
Emitter-Base Voltage
Collector Cutoff Current
IC=0A , IE=50 mA
VCE=100 V , IB=0A
VCE= VCEX, VBE= -1.5V
Collector Cutoff Current
VCE= VCEX, VBE= -1.5V
Tcase = 125°C
Emitter Cutoff Current
VEB=5.0 V, IC=0
DC Current Gain (*)
IC=10 A , VCE=4.0 V
IC=15 A , VCE=4.0 V
Collector-Emitter saturation
IC=10 A , IB=1 A
Voltage (*)
IC=15 A , IB=1.88 A
Base-Emitter saturation Voltage (*) IC=15 A , IB=1.88 A
Second breakdown collector
VCE=30 V , ts = 1s
current
VCE=50 V , ts = 1s
Clamped ES/B Collector current
Vclamp=125 V
L=500 µH
Transition frequency
VCE=15 V , IC=1 A
f=10 MHz
Turn-on time
IC=15 A , IB=1.88 A
VCC=30 V
Storage time
File time
IC=15 A , VCC=30 V
IB1 = -IB2 =1.88 A
Min Typ Max Unit
125 -
-
V
7
-
-
V
-
-
1 mA
-
-
1
-
-
5 mA
-
-
1 mA
15
8
-
-
45
-
-
- 0.6 1.2
- 0.9 1.6 V
- 1.7 2
4
1
-
-
-
-
A
15 -
-
A
8
-
- MHz
- 0.35 1.2
- 0.85 1 µs
- 0.14 0.4
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
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