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BU2508AF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
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NPN BU2508AF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
V(BR)EBO
VCE(sat)
VBE(sat)
ICES
IEBO
hFE
hFE
COB
Collector-Emitter Sustaining
Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
IC= 100mA
IB= 0, L= 25mH
IE= 1mA
IC= 0
IC= 4.5A
IB= 1.1A
IC= 4.5A
IB= 1.7A
VCE= 1500V
VBE= 0
VCE= 1500V, VBE= 0
TC=125°C
VEB= 7.5V
IC= 0
IC= 0.1A
VCE= 5V
IC= 4.5A
VCE= 1V
IE= 0; VCB= 10V
ftest= 1MHz
Switching times
tstg
Storage Time
tf
Fall Time
IC= 4.5A , IB(end)= 1.1A
LB= 6µH
-VBB= 4V; (-dIB/dt=
0.6A/µs)
Min Typ Max Unit
700 -
-
V
7.5 -
-
V
-
- 1.0 V
-
- 1.1 V
-
- 1.0
mA
-
- 2.0
-
- 1.0 mA
- 13 -
-
4
-
7
-
- 80 - pF
-
- 6.0 µs
-
- 0.6 µs
25/10/2012
COMSET SEMICONDUCTORS
2/3
08/11/2012
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