BTA212-600B Datasheet, PDF (2/2 Pages) Comset Semiconductor – TRIACS SENSITIVE GATE

BTA212-600B
ELECTRICAL CHARACTERISTICS
( Ta = 25 C)
Symbol
V_DRM
V_RRM
I_T(RMS)
V_T
I_H
Ratings
Repetitive peak off-state
voltages
RMS on-state current
On-state voltage
Holding current
I_GT
Gate trigger
current
I_L
Latching
current
V_GT
Gate trigger voltage
Test Conditions
Min Typ Max Unit
—
full sine wave
Tmb ≤ 107 °C
—
IT=15A
—
VD = 12 V; IGT = 0.1 A
—
T2+G+ —
VD = 12 V
IT = 0.1 A
T2+G- —
T2-G- —
T2-G+ —
T2+G+ —
VD = 12 V
IGT = 0.1 A
T2+G- —
T2-G- —
T2-G+ —
VD = 12 V; IT = 0.1 A
—
600 — V
12 — A
1.4 1.65 V
— 60 mA
— 50
— 50
mA
— 50
— 100
— 60
— 90
mA
— 60
— 90
0.7 1.5 V
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such
information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset
Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors
assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or
incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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30/10/2012
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