BT151 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Thyristors

SEMICONDUCTORS
BT151 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V_DRM
V_RRM
I_GT
V_GT
I_L
I_H
I_D
I_R
V_T
Repetitive peak
off-state voltage
Repetitive peak reverse
voltage
Gate trigger current
Gate trigger voltage
Latching current
Holding current
Off-state current
BT151-500R
BT151-650R
BT151-800R
BT151-500R
BT151-650R
BT151-800R
V_D = 12 V; I_T = 100 mA
V_D = 12 V; I_T = 100 mA
V_D = 12 V; I_GT = 100 mA
V_D = 12 V; I_GT = 100 mA
V_D = V_{DRM max;} T_j = 125°C
Reverse current
On-state voltage
V_R = V_{RRM max;} T_j = 125°C
I_T = 23 A
Min Typ Max Unit
500 -
-
650 -
-
800 -
500 -
-
-
V
650 -
-
800 -
-
-
- 15 mA
-
- 1.5 V
-
- 40 mA
-
- 20 mA
-
- 0.5 mA
-
- 0.5 mA
-
- 1.75 V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
dV_D/dt
Critical rate of rise of
off-state voltage
t_gt
Gate controlled
turn-on time
t_q
Circuit commutated
Turn-off time
Test Condition(s)
Min Typ Max Unit
V_DM = 67% V_DRMmax; T_j = 125°C
Exponential waveform; gate
50 130
- V/µs
open circuit
V_DM = 67% V_DRMmax; T_j = 125°C
Exponential waveform
200 1000 - V/µs
R_GK = 100 Ω
I_TM = 40 A; V_D = V_DRMmax
I_G = 0.1 A; dI_G/dt = 5 A/µs
-
2
- µs
V_DM = 67% V_DRMmax; T_j = 125°C
I_TM = 20 A; V_R = 25 V
R_GK = 100 Ω
dI_TM/dt = 30 A/µs
dV_D/dt = 50 V/µS
- 70 - µs
26/09/2012
COMSET SEMICONDUCTORS
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