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BDX65 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – NPN SILICON DARLINGTONS
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THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BDX65
BDX65A
BDX65B
BDX65C
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=0.1 A, IB=0, L=25mH
ICEO
IEBO
ICBO
VCE(SAT)
Collector Cutoff Current
Emitter Cutoff Current
VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V
VBE=5 V
Collector-Base Cutoff
Current
VCBO=60 V
VCBO=40 V
TCASE=200°C
VCBO=50 V
VCBO=80 V
TCASE=200°C
VCBO=100 V
VCBO=60 V
TCASE=200°C
VCBO=120 V
VCBO=70 V
TCASE=200°
Collector-Emitter saturation
Voltage (*)
IC=5.0 A, IB=20 mA
VF
Forward Voltage (pulse
method)
IF=3 A
BDX65 60 - -
BDX65A 80 -
BDX65B 100 -
-
-
V
BDX65C 120 - -
BDX65
-
BDX65A -
BDX65B -
BDX65C -
BDX65
BDX65A
BDX65B
-
BDX65C
-
BDX65
-
-
BDX65A -
-
BDX65B -
-
BDX65C -
-
-
-
1 mA
-
- 5.0 mA
- 0.4
-3
- 0.4
-3
- 0.4
-
-3
- 0.4
-
3
BDX65
BDX65A
BDX65B
-
-
2
V
BDX65C
BDX65
BDX65A
BDX65B
-
1.8
-
V
BDX65C
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