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BDX42_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON PLANAR DARLINGTON TRANSISTORS
◁
NPN BDX42 – BDX43– BDX44
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VBE = 0 ; VCE = 45V
BDX42
-
- 10
ICES
Collector cut-off current VBE = 0 ; VCE = 60V
BDX43
-
- 10 µA
VBE = 0 ; VCE = 80V
BDX44
-
- 10
BDX42 -
- 10
IEBO
Emitter cut-off current IC =0 ; VEB = 4V
BDX43 -
BDX44 -
- 10 µA
- 10
BDX42 -
- 1.3
IC=500 m A, IB=0.5 mA BDX43
-
- 1.3
BDX44 -
- 1.3
IC=1.0 A, IB=1.0 mA BDX43
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=1.0 A, IB=4.0 mA
IC=500 m A, IB=0.5 mA
Tj=150 °C
BDX42
BDX44
BDX42
BDX43
BDX44
-
-
-
-
-
- 1.6
- 1.6
- 1.6
- 1.3 V
- 1.3
- 1.3
IC=1.0 A, IB=1.0 mA
Tj=150 °C
BDX43
-
- 1.8
IC=1.0 A, IB=4.0 mA BDX42
-
Tj=150 °C
BDX44 -
- 1.6
- 1.6
IC=500 m A, IB=0.5 mA
BDX42
BDX43
-
-
- 1.9
- 1.9
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC=1.0 A, IB=1.0 mA
BDX44
BDX43
-
-
IC=1.0 A, IB=4.0 mA
BDX42
BDX44
-
-
-
-
1.9
2.2
V
- 2.2
- 2.2
BDX42 1000 -
-
hFE
DC Current Gain
VCE=10 V, IC=150 mA BDX43 1000 -
-
BDX44 1000 -
-
BDX42 2000 -
-
-
VCE=10 V, IC=500 mA BDX43 2000 -
-
BDX44 2000 -
-
hfe
Small Signal Current
Gain
VCE=5.0 V, IC=500 mA
f=35MHz
BDX42
BDX43
BDX44
-
-
-
10
10
10
-
-
-
-
ton
Turn-on time
toff
Turn-off time
IC=500 mA
IBon= -IBoff=0.5 mA
- 400 -
- 1500 -
ns
ton
Turn-on time
toff
Turn-off time
IC=1 A
IBon= -IBoff=1.0 mA
- 400 -
- 1500 -
ns
24/10/2012
COMSET SEMICONDUCTORS
2|3
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