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| BDX35 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistors | |||
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NPN BDX35 â BDX36 â BDX37
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting
base
Thermal Resistance, Junction to ambient
infree air
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
5
100
Unit
K/W
K/W
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE
Collector cut-off current
Emitter cut-offcurrent
IE=0 , VCB=80 V
IE=0 , VCB=100 V
IE=0 , VCB=100 V
IE=0 , VCB=80 V , Tj = 100°C
IE=0 , VCB=100 V,Tj = 100°C
IE=0 , VCB=100 V,Tj = 100°C
IC=0, VEB=4 V
IC=0, VEB=5 V
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
Collector-Emitter saturation
Voltage (*)
IC=5.0 A, IB=500 mA
IC=7.0 A, IB=700 mA
IC=10 A, IB=1A
Base-Emitter saturation
Voltage (*)
IC=5.0 A, IB=500 mA
IC=7.0 A, IB=700 mA
IC=10 A, IB=1A
DC Current Gain (*)
VCE=10 V, IC=500m A
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX36
BDX35
BDX36
BDX37
BDX35
BDX37
BDX36
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
- - 10
- - 10
-
-
-
-
10
50
µA
- - 50
- - 50
- - 10
- - 10 µA
- - 10
- -1
- - 1 mA
- -1
- - 0,9
- - 0,7
- - 0,9
- - 1,2 V
---
- - 1,2
- - 1,5
- - 1 ,6
-
- 2,0 V
- - 2,0
- - 2,5
45 - 450
130 -
- 80
*
COMSET SEMICONDUCTORS
2
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