BD683 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

NPN BD683
PNP BD684
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I_CBO
Collector cut-off current
I_E=0 , V_CB= V_CEOMAX=120 V
-
I_E=0 , V_CB= 1/2V_CBOMAX= 70V,T_j= 150°C -
-
-
0,2
1
mA
I_CEO
Collector cut-off current
I_B=0 , V_CE= 1/2V_CEOMAX=60 V
-
-
0,2 mA
I_EBO
V_CE(SAT)
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
I_C=0, V_EB=5 V
I_C=1.5 A, I_B=6 mA
-
-
5 mA
-
-
2,5
V
V_CE=3 V, I_C=500 mA
- 2200 -
h_FE
DC Current Gain
V_CE=3 V, I_C=1,5 A
V_CE=3 V, I_C=4 A
750 -
-
- 1500 -
V_BE
Base-Emitter Voltage(1&2) VCE=3 V, IC=1,5 A
-
-
2,5
V
h_fe
Small signal current gain
V_CE=3 V, I_C=1,5 A, f= 1 MHz
10 -
-
f_hfe
Ut-off frequency
V_CE=3 V, I_C=1,5 A
- 60
- kHz
V_F
Diode forward voltage
I_F=1,5 A
I_(SB)
Second-breakdown collector V_CE=50 V, t_P= 20ms,non rep., without
current
heatsink
0,8 -
-
A
t_on
Turn-on time
t_off
Turn-off time
I_con= 1,5A, I_bon= -I_boff= 6mA, V_CC=30V
- 0,8
- 4,5
2
8
µs
1. Measured under pulse conditions :t_P <300µs, δ <2%.
2. V_BE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
inches
min
max
min
max
A
7.4
7.8
0.295 0.307
B
10.5
10.8 0.413 0.425
C
2.4
2.7
0.094 0.106
D
0.7
0.9
0.027 0.035
E
2.2 typ.
0.087 typ.
F
0.49
0.75 0.019 0.029
G
4.4 typ.
0.173 typ.
H
2.54 typ.
0.100 typ.
L
15.7 typ.
0.618 typ.
M
1.2 typ.
0.047 typ.
N
3.8 typ.
0.149 typ.
P
3.0
3.2
0.118 0.126
Pin 1 :
Pin 2 :
Pin 3 :
Emitter
Collector
Base
COMSET SEMICONDUCTORS
2/3