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BD676 Datasheet, PDF (2/3 Pages) Motorola, Inc – Plastic Medium-Power Silicon PNP Darlingtons
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PNP BD676-BD678-BD680-BD682
NPN BD675-BD677-BD679-BD681
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
M
x
Unit
-ICBO
Collector cut-off current
IE=0 , -VCB= -VCBOMAX=45 V BD676
IE=0 , -VCB= -VCBOMAX=60 V BD678
IE=0 , -VCB= -VCBOMAX=80 V BD680
IE=0 , -VCB= -VCBOMAX=100 V BD682
IE=0 , -VCB= -½VCBOMAX= BD676
45V,Tj= 150°C
IE=0 , -VCB= -½VCBOMAX= BD678
60V,Tj= 150°C
IE=0 , -VCB= -½VCBOMAX= BD680
80V,Tj= 150°C
IE=0 , -VCB= -½VCBOMAX= BD682
100V,Tj= 150°C
BD676
-ICEO
Collector cut-off current
IB=0 , -VCE= -½VCEOMAX=60 V
BD678
BD680
BD682
-IEBO
-VCE(SAT)
Emitter cut-offcurrent
IC=0, -VEB=5 V
Collector-Emitter saturation
Voltage
-IC=1.5 A, -IB=6 mA
hFE
DC Current Gain
-VCE=3 V, -IC=500 mA
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=4 A
-VBE
hfe
fhfe
VF
-I(SB)
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
collector current
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=1,5 A, f= 1 MHz
-VCE=3 V, -IC=1,5 A
IF=1,5 A
-VCE=50 V, tP= 20ms,non rep., without
heatsink
ton
Turn-on time
toff
Turn-off time
-Icon= 1,5A, -Ibon= Iboff= 6mA,
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
-
- 0,2
-
- 0,2
-
- 0,2
-
- 0,2
-
-1
mA
-
-1
-
-1
-
-1
-
- 0,2
-
-
-
-
0,2
0,2
mA
-
- 0,2
-
- 5 mA
-
- 2,5 V
- 2200 -
750 - -
- 650 -
-
- 2,5 V
10 - -
- 60 - kHz
- 1,5 - V
0,8 - - A
-
0,3 1.5 µs
- 1,5 5
COMSET SEMICONDUCTORS
2
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