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BC177 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose transistor
PNP BC177 – BC178 – BC179
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
VCE(SAT)
VBE(SAT)
VBE
hFE
fT
F
CC
Collector-Emitter
saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Voltage
DC Current Gain (*)
Transition frequency
Noise figure
Collector capacitance
IC =-10 mA
IB =-0.5 mA
IC =-100 mA
IB =-5 mA
IC =-10 mA
IB =-0.5 mA
IC =-100 mA
IB =-5 mA
IC =-2 mA
VCE =-5 V
IC= -2 mA
VCE= 5 V
IC =-10 mA
VCE =-5 V
f = 100 MHz
IC = -200 µA
VCE =-5 V
f = 1kHz
Rg=2kΩ
B = 200Hz
IE = 0
VCB =-10 V
f = 1MHz
BC177
BC178
BC179
BC177
BC178
BC179
BC177
BC178
BC179
BC177
BC178
BC179
BC177
BC178
BC179
BC177A
BC178A
BC179A
BC177B
BC178B
BC179B
BC177
BC178
BC179
BC177
BC178
BC179
BC177
BC178
BC179
Min Typ Max Unit
- -0.075 -0.25
-
-0.2
-
- -0.72 -0.8
V
- -0.86 -
-0.6 -0.65 -0.75 V
125
-
260
-
240
-
500
-
200
-
MHz
-
-
10
-
-
10
db
-
-
4
-
5
-
pF
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
18/10/2012
COMSET SEMICONDUCTORS
Value
500
200
Unit
°C/W
°C/W
2|3