BC140_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – GENERAL PURPOSE TRANSISTORS

NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I_CES
Collector – Cutoff Current
I_E= 0
V_CES= 60 V
I_E= 0, V_CES= 60 V
T_amb = 150°c
BC140
BC141
BC140
BC141
-
-
- 100 nA
- 100 µA
V_CB0
Collector – Base
Breakdown Voltage
I_C = 100 µA
I_E= 0
BC140 80
-
BC141 100 -
-
-
V
V_CE0 (*)
Collector – Emitter
Breakdown Voltage
I_C = 30 mA
I_B= 0
BC140 40
-
BC141 60
-
-
-
V
V_EB0
Emitter – Base
Breakdown Voltage
I_E= 100 µA
I_C= 0
BC140
BC141
7
-
-
V
V_CE(SAT) (*) _{Collector-Emitter}
saturation Voltage
I_C= 100 mA , I_B= 10 mA
I_C= 500 mA , I_B= 50 mA
I_C= 1 A, I_B= 100 mA
-
0.1
- 0.35
-
0.6 1
V
V_BE (*) Base-Emitter Voltage
I_C= 1 A , V_CE= 1V
1.25 1.8
I_C= 100 µA , V_CE= 1
V
Gr 10
Gr 16
-
-
-
75 -
40 -
90 -
h_FE (*)
DC Current Gain
I_C= 100 mA , V_CE= 1
V
Gr 10
Gr 16
40 140 250
63 100 160
100 160 250
-
I_C= 1 A , V_CE= 1 V _{Gr 10}
-
-
26 -
20 -
Gr 16
-
30 -
f_T
Transition Frequency
I_C= 50 mA , V_CE= 10 V
50
-
-
MH_Z
C_CBO
Collector – base
Capacitance
I_E= 0 ;V_CB= 10V
f = 1 MH_Z
-
12 25 pF
t_off
Turn-off times
I_C=100 mA
I_B1=-I_B2=5 mA
-
- 850 ns
t_on
Turn-on times
I_C=100 mA
I_B1=1 mA
-
- 250 ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
16/10/2012
COMSET SEMICONDUCTORS
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