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| BC140 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN medium power transistors | |||
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NPN BC140/10 â BC140/16
NPN BC141/10 â BC141/16
Symbol
Ratings
Test Condition(s)
ICES
VCB0
VCE0 (*)
VEB0
VCE(SAT) (*)
VBE (*)
Collector â Cutoff Current
Collector â Base Breakdown
Voltage
Collector â Emitter
Breakdown Voltage
Emitter â Base Breakdown
Voltage
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
IE= 0 ;VCES= 60 V
IE= 0 ; VCES= 60 V
Tamb = 150°c
IC = 100 µA
IE= 0
IC = 30 mA
IB= 0
IE= 100 µA
IC= 0
IC= 100 mA , IB= 10 mA
IC= 500 mA , IB= 50 mA
IC= 1 A, IB= 100 mA
IC= 1 A , VCE= 1V
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
IC= 100 µA , VCE= 1 V
Gr 10
Gr 16
hFE (*)
DC Current Gain
fT
CCBO
toff
ton
Transition Frequency
Collector â base
Capacitance
Turn-off times
Turn-on times
IC= 100 mA , VCE= 1 V
IC= 1 A , VCE= 1 V
IC= 50 mA , VCE= 10 V
IE= 0 ;VCB= 10V
f = 1 MHZ
IC=100 mA
IB1=-IB2=5 mA
IC=100 mA
IB1=1 mA
Gr 10
Gr 16
Gr 10
Gr 16
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
Min Typ Mx Unit
-
- 100 nA
-
- 100 µA
80 -
100 -
-
-
V
40 -
60 -
-
-
V
7
--
V
- 0.1
- 0.35
- 0.6 1
V
1.25 1.8
- 75 -
- 40 -
- 90 -
40 140 250
63 100 160 -
100 160 250
- 26 -
- 20 -
- 30 -
50
-
-
MHZ
- 12 25 pF
-
- 850 ns
-
- 250 ns
COMSET SEMICONDUCTORS
2/3
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