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| 2N6055_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – POWER COMPLEMENTARY SILICON TRANSISTORS | |||
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NPN 2N6055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
ICEX
Collector Cutoff
VCE= VCEX =60 V, VBE=-1.5 V 2N6055
-
Current
VCE= VCEX =60 V, VBE=-1.5 V
TC=150°C
2N6055
-
ICEO
Collector Cutoff
Current
VCE=30 Vdc, IB=0
2N6055 -
IEBO
Emitter Cutoff
Current
VEB=5 V
2N6055 -
Collector-Emitter
VCEO(SUS) Sustaining Voltage IC=0.1 A
(*)
2N6055 60
- 500 µA
-
5 mA
- 0.5 mA
- 2.0 mA
-
-
V
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter
saturation Voltage
(*)
IC=4 A, IB=16 mA
IC=8 A, IB=80 mA
Base-Emitter
Saturation Voltage IC=8 A, IB=80 mA
(*)
Base-Emitter
Voltage (*)
IC=4 A, VCE=3 V
2N6055 -
2N6055 -
- 2.0
V
- 3.0
2N6055 -
-
4
V
2N6055 -
- 2.8 V
fT
Transition
Frequency
IC=3 A, VCE=3 V, f=1 MHz 2N6055 4
-
- MHz
VCE=3 V, IC=4 A
hFE
DC Current Gain
(*)
VCE=3.0 V, IC=8 A
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
2N6055 750 - 18000 -
2N6055 100 -
-
17/10/2012
COMSET SEMICONDUCTORS
2|3
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