2N6053 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,100W)

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V_CEO(SUS)
I_CEO
I_CEX
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
V_BE(on)
f_T
C_cbo
Ratings
Test Condition(s)
Min Typ Mx
Collector-Emitter Sustaining
Voltage (1)
I_C=100 mA
2N6053
2N6055
60
-
-
Collector-Emitter Current VCE=30 V
2N6053
2N6055
-
- 0.5
Collector-Cutoff Current
V_CE=60 V, V_BE=-1.5 V
2N6053
2N6055
-
- 500
V_CE=60 V, V_BE=-1.5 V
T_C=150°C
2N6053
2N6055
-
-
5
Emitter Cutoff Current
V_EB=5.0 V
2N6053
2N6055
-
- 2.0
DC Current Gain (*)
I_C=4.0 A, V_CE=3.0 V
I_C=8.0 A, V_CE=3.0 V
2N6053 _{750 - 18K}
2N6055
2N6053 _{100 -}
-
2N6055
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
I_C=4.0 A, I_B=16 mA
I_C=8.0 A, I_B=80 mA
I_C=8.0 A, I_B=80 mA
2N6053 -
2N6055 -
2N6053 -
2N6055 -
- 2.0
- 3.0
-
-
4.0
Base-Emitter Voltage
I_C=4.0 A, V_CE=3.0 V
2N6053
2N6055
-
- 2.8
Transition Frequency
V_CE=3.0 Vdc, I_C=3.0 Adc, f=1 MHz
2N6053
2N6055
4
-
-
-
-
Collector-base
Capacitance
V_CB=10 V, I_E=0, f=1 MHz
2N6053 -
2N6055 -
- 200
- 300
Unit
V
mA
µA
mA
mA
-
V
V
V
MHz
pF
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
! ! ! For PNP types current and voltage values are negative ! ! !
2