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| 2N5679 Datasheet, PDF (2/3 Pages) Seme LAB – PNP SILICON TRANSISTORS | |||
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2N5679 â 2N5680
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
ICBO
Collector Cutoff
Current
VCB = -100 V, IE = 0
VCB = -120 V, IE = 0
2N5679
2N5680
-
-
-1 µA
ICEO
Collector Cutoff
Current
VCE = -70 V, IB = 0
VCE = -80 V, IB = 0
2N5679
2N5680
-
- -10 µA
VCE = -100 V, VBE = 1.5 V 2N5679
VCE = -120 V, VBE = 1.5 V 2N5680
-
-
-1 µA
ICEV
Collector Cutoff
Current
VCE = -100 V, VBE = 1.5 V
TC = 150°C
VCE = -120 V, VBE = 1.5 V
TC = 150°C
2N5679
2N5680
-
-
-1 mA
IEBO
Emitter Cutoff
Current
VBE = -4.0 V, IC = 0
2N5679
2N5680
-
-
-1 µA
VCEO(sus)
Collector Emitter
Sustaining voltage (*)
IC = -10 mA, IB = 0
2N5679 -100 -
2N5680 -120 -
-
-
V
IC = -250 mA
IB = -25 mA
2N5679
2N5680
-
- -0.6
VCE(SAT)
Collector-Emitter
IC = -500 mA
saturation Voltage (*) IB = -50 mA
2N5679
2N5680
-
-
-1 V
IC = -1 A
IB = -200 mA
2N5679
2N5680
-
-
-2
VBE
Base-Emitter Voltage
(*)
IC = -250 mA, VCE = -2 V
2N5679
2N5680
-
-
-1
hFE
DC Current Gain (*)
IC = -250 mA, VCE = -2 V
IC = -1 A, VCE = -2 V
2N5679
2N5680
2N5679
2N5680
40
5
- 150 V
-
-
fT
Transition frequency
IC = -100 mA, VCE = -10 V
f = 10 MHz
2N5679
2N5680
30
-
- MHz
COB
Output Capacitance
IE = 0, VCB = -20 V
f = 1MHz
2N5679
2N5680
-
- 50 pF
hfe
Small Signal Current IC = -200 mA, VCE = -1.5 V 2N5679
Gain
f = 1 kHz
2N5680
40
-
-
-
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
24/09/2012
COMSET SEMICONDUCTORS
2/3
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