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| 2N4901_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – PNP SILICON TRANSISTORS, EPITAXIAL BASE | |||
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2N4901 â 2N4902 â 2N4903
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(BR)
Collector-Emitter
Breakdown Voltage)
2N4901 -40
IC=200 mAdc, IB=0 2N4902 -60 -
2N4903 -80
-
V
ICBO
Collector-Base cut-off
Current
VCE=-40 V, IE=0
VCE=-60 V, IE=0
VCE=-80 V, IE=0
2N4901 -
2N4902 -
2N4903 -
- 0.1
- 0.1 mA
- 0.1
VCE=-40 V, VEB=1.5 V
-
- -0.1
VCE=-40 V, VEB=1.5 V 2N4901
TCASE=150°C
-
- -2.0
VCE=-60 V, VEB=1.5 V
-
- -0.1
ICEX
Collector Cutoff Current VCE=-60 V, VEB=1.5 V 2N4902
TCASE=150°C
-
- -2.0 mA
VCE=-80 V, VEB=1.5 V
-
- -0.1
VCE=-80 V, VEB=1.5 V 2N4903
TCASE=150°C
-
- -2.0
2N4901
IEBO
Emitter Cutoff Current VBE=5.0 V, IC=0
2N4902 -
- -1.0 mA
2N4903
2N4901
VCE=-2.0 V, IC=-1.0 A 2N4902 20
-
80
hFE
DC Current Gain (*)
2N4903
2N4901
V
VCE=-2.0 V, IC=-5.0 A 2N4902 7
-
-
2N4903
2N4901
IC=-1.0 A, IB=-0.1 A 2N4902 -
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
2N4903
2N4901
- -0.4
V
IC=-5.0 A, IB=-1.0 A 2N4902 -
2N4903
- -1.5
2N4901
VBE
Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V 2N4902 -
- -1.2 V
2N4903
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
IC=-5.0 A, IB=-1.0 A
2N4901
2N4902
2N4903
-
1.7
-
V
Hfe
Forward Current
Transfer Ratio (*)
VCE=-10 V, IC=-0.5 A
f =1MHz
20 -
-
V
fT
Transition Frequency VCE=-10 V, IC=-1.0 A, f=1.0 kHz 4
-
- MHz
Is/b
Second Breakdown
Collector Current
t=1 s, VCE=40 V, TCASE=100°C 1.25 -
-
A
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
17/10/2012
COMSET SEMICONDUCTORS
23
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