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| 2N1893 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN medium power transistor | |||
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NPN 2N1893
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
IEBO
VCBO
Collector Cutoff Current
Emitter Cutoff Current
Collector Base
Sustaining Voltage
VCB= 90 V
IE= 0
VEB= 5 V, IB= 0
Tamb= 25°C
Tamb= 150°C
IC= 100 mA, IE= 0
VCEO
Collector Emitter
Sustaining Voltage (*)
IC= 10 mA, IB= 0
VCER
Collector Base
Breakdown Voltage (*)
IC= 10 mA, RBE = 10 â¦
VEBO
Emitter Base
Breakdown Voltage
IE= 100 µA, IC= 0
hFE
VCE(SAT)
VBE(SAT)
fT
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
Transition Frequency
IC= 0.1 mA, VCE= 10 V
IC= 10 mA
Tamb= 25°C
VCE= 10 V
Tamb= -55°C
IC= 150 mA, VCE= 10 V
IC= 50 mA, IB= 5 mA
IC= 150 mA, IB= 15 mA
IC= 50 mA, IB= 5 mA
IC= 150 mA, IB= 15 mA
IC= 50 mA, VCE= 10 V
f= 20 MHz
CC
Collector Capacitance
IE= ie = 0 ,VCB= 10 V
f = 1MHz
Ce
Base Capacitance
IC= ic = 0 ,VEB= 0.5 V
f = 1MHz
(*) Pulse conditions : tp < 300 µs, δ =2%.
Min Typ Max
- - 10
- - 15
- - 10
120 - -
80 - -
100 - -
7- -
20 - -
20 - -
35 -
40 - 120
- - 0.9
- - 0.5
- - 1.2
- - 1.3
50 - -
- - 15
- - 85
Unit
nA
µA
nA
V
V
V
V
-
V
V
MHz
pF
pF
11/09/2012
COMSET SEMICONDUCTORS
3/3
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