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| 2N1671 Datasheet, PDF (2/2 Pages) Advanced Semiconductor – UNIJUNCTION TRANSISTOR | |||
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2N1671 â 2N1671A â 2N1671B
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IEB2O
VEB1(sat)
RBBO
η
IV
IP
Ratings
Emitter Reverse Current
Emitter saturation Voltage
Interbase Resistance
Intrinsic stand-off ratio
Valley Current
Peak Current
Test Condition(s)
Min Typ Mx
VB2E=30 V, IB1= 0
VB2B1 = 10 V, IE= 50 mA
VB2B1 = 3 V, , IE= 0
VB2B1= 10 V
VB2B1= 10 V, RB2= 100
VB2B1= 25 V
2N1671 - - -12
2N1671A - - -12
2N1671B - - -0.2
2N1671 - - 5
2N1671A - - 5
2N1671B - - 5
2N1671 4.7 - 9.1
2N1671A 4.7 - 9.1
2N1671B 4.7 - 9.1
2N1671 0.47 - 0.62
2N1671A 0.47 - 0.62
2N1671B 0.47 - 0.62
2N1671 - - 8
2N1671A - - 8
2N1671B - - 8
2N1671 - - 25
2N1671A - - 25
2N1671B - - 6
Unit
µA
V
K
-
mA
µA
MECHANICAL DATA CASE TO-5
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
2/2
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