TIP115 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

SEMICONDUCTORS
PNP TIP115-116-117
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
NPN complements are TIP110-111-112
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
I_CM
Collector Peak Current
I_B
Base Current
@ T_c < 25°
P_T
Power Dissipation
@ T_a < 25°
T_J
Junction Temperature
T_s
Storage Temperature range
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
-60
-80
-100
-60
-80
-100
-5
-2
-4
50
50
2
150
-65 to +150
Unit
V
V
V
A
A
mA
Watts
°C
05/10/2012
COMSET SEMICONDUCTORS
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