TIC206A Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• 4 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max I_GT of 5 mA (Quadrants 1-3)
• Sensitive gate triacs
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
V_DRM
I_T(RMS)
I_TSM
I_TSM
I_GM
P_GM
P_G(AV)
T_C
T_stg
T_L
A B DMS N
Repetitive peak off-state voltage
(see Note1)
100 200 400 600 700 800 V
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
4
A
Peak on-state surge current full-sine-wave
(see Note3)
25
A
Peak on-state surge current half-sine-wave
(see Note4)
30
A
Peak gate current
± 0.2
A
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200
1.3
W
µs)
Average gate power dissipation at (or
below) 85°C case (see Note5)
0.3
W
Operating case temperature range
-40 to +110
°C
Storage temperature range
-40 to +125
°C
Lead temperature 1.6 mm from case for 10
seconds
230
°C
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