TIC126A Datasheet, PDF (1/3 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
• 12 A Continuous On-State Current
• 100 A Surge-Current
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max I_GT of 20 mA
• Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
ABCDEMSN
V_DRM
Repetitive peak off-state voltage
(see Note1)
100 200 300 400 500 600 700 800 V
V_RRM
I_T(RMS)
Repetitive peak reverse voltage
100 200 300 400 500 600 700 800 V
Continuous on-state current at (or below)
70°C case temperature (see note2)
12
A
Average on-state current (180° conduction
I_T(AV)
angle) at(or below) 70°C case temperature
7.5
A
(see Note3)
I_TM
Surge on-state current (see Note4)
100
A
I_GM
Peak positive gate current (pulse width
≤300 µs)
3
A
P_GM
Peak power dissipation (pulse width ≤300
µs)
5
W
P_G(AV)
Average gate power dissipation (see
Note5)
1
W
T_C
Operating case temperature range
-40 to +110
°C
T_stg
Storage temperature range
-40 to +125
°C
T_L
Lead temperature 1.6 mm from case for 10
seconds
230
°C
Notes:
1. These values apply when the gate-cathode resistance R_GK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
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