TIC106A_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
• 5 A Continuous On-State Current
• 30 A Surge-Current
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max I_GT of 200 µA
• Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DRM
V_RRM
I_T(RMS)
I_T(AV)
I_TM
I_GM
P_GM
P_G(AV)
T_C
T_stg
T_L
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 80°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
80°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width ≤300 µs)
Peak power dissipation
(pulse width ≤300 µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Value
Unit
ABCDEMSN
100 200 300 400 500 600 700 800 V
100 200 300 400 500 600 700 800 V
5
A
3.2
A
30
A
0.2
A
1.3
W
0.3
W
-40 to +110
°C
-40 to +125
°C
230
°C
29/10/2012
COMSET SEMICONDUCTORS
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