MJE13007 Datasheet, PDF (1/3 Pages) Motorola, Inc – POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

SEMICONDUCTORS
MJE13007
SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power
switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V
SWITCHMODE applications such as switching regulator’s, inverters, motor controls, solenoid/relay
drivers and deflection circuits.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
I_CM
Collector Peak Current (*)
I_B
Base Current
I_BM
Base Peak Current (*)
I_E
Emitter Current
I_EM
Emitter Peak Current (*)
P_T
Power Dissipation at Case Temperature
t_J
Junction Temperature
t_s
Storage Temperature range
(*)Pulse Width = 5ms, duty cycle <10%.
Value
@ T_mb < 25°
400
700
9
8
16
4
8
12
24
80
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.56
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
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