MJE13005 Datasheet, PDF (1/3 Pages) Motorola, Inc – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

SEMICONDUCTORS
MJE13005
SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high voltage, high speed
power switching inductive circuits where fall time is critical. They are particularly suited for
115V and 220V SWITCHMODE applications such as switching regulator’s, inverters, motor
controls, solenoid/relay drivers and deflection circuits
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (*)
Base Current
Base Peak Current (*)
Emitter Current
Emitter Peak Current (*)
Power Dissipation at Case Temperature
P_T
Power Dissipation at free Air Temperature
t_J
Junction Temperature
t_s
Storage Temperature range
(*)Pulse Width = 5ms, duty cycle <10%.
Value
@ T_mb < 25°
400
700
9
4
8
2
4
6
12
75
2
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.67
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
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