MJ900_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – COMPLEMENTARY POWER DARLINGTONS

MJ900 – MJ901 PNP
COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic
Darlington configuration, and are mounted in JEDEC TO-3 metal case.
They are intended for use in power linear and switching applications.
Their complementary NPN types are the MJ1000 and MJ1001 respectively.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
V_EBO
I_C
I_B
P_T
T_J
T_S
Collector-Base Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_B=0
I_C(RMS)
@ T_C < 25°
Derate above 25°C
Value
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
-60
-80
-60
-80
-5.0
-8.0
-0.1
90
0.515
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1.94
Unit
V
V
V
A
A
W
W/°C
°C
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
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