MJ4030_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

PNP MJ4030 – MJ4031 – MJ4032
MEDIUM POWER COMPLEMENTARY SILICON
TRANSISTORS
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration
and are mounted in Jedec TO-3 metal case.
They are intented for use as output devices in complementary general purpose amplifier
applications.
The complementary NPN types are the MJ4033, MJ4034, MJ4035
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage
I_E=0
V_CEO
Collector-EmitterVoltage
I_B=0
V_EBO
I_C
I_B
P_T
T_J
T_s
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_C=0
@ T_C < 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
MJ4030
MJ4031
MJ4032
MJ4030
MJ4031
MJ4032
MJ4030
MJ4031
MJ4032
-60
-80
-100
-60
-80
-100
-5.0
-16
-0.5
150
200
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.17
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
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