MJ2500_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – COMPLEMENTARY POWER DARLINGTONS

PNP MJ2500 – MJ2501
COMPLEMENTARY POWER DARLINGTONS
The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for
use in power linear and switching applications.
The complementary NPN types are the MJ3000 and MJ3001 respectively
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
V_EBO
I_C
I_B
P_T
T_J
T_s
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_E=0
I_B=0
I_C=0
@ T_C < 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
-60
-80
-60
-80
-5.0
-10
-0.2
150
200
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.17
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
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