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| MJ1000_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – COMPLEMENTARY POWER DARLINGTONS | |||
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NPN MJ1000 â MJ1001
COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington
configuration, and are mounted in JEDEC TO-3 metal case.
They are intended for use in power linear and switching applications.
Their complementary PNP types are the MJ900 and MJ901 respectively.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VEBO
IC
IB
PT
TJ
TS
Collector-Base Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IB=0
IC(RMS)
@ TC < 25°
Derate above 25°C
Value
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
60
80
60
80
5.0
8.0
0.1
90
0.515
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.94
Unit
V
V
V
A
A
W
W/°C
°C
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1|3
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