IRF840 Datasheet, PDF (1/3 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

SEMICONDUCTORS
IRF840
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in off-line switched mode power
supplies, T.V. and computer monitor power supplies.
DC-DC converters, motor control circuits and general purpose
switching applications
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DS
I_DS
I_DM
I_AR
E_AS
E_AR
V_GS
R_DS(on)
P_T
t_J
t_stg
Drain-Source Voltage
Continuous Drain Current T_C= 37°C
Pulsed Drain Current T_C= 25°C
Avalanche Current, Limited by T_jmax
Avalanche Energy, Single pulse
Avalanche Energy, Periodic Limited by T_jmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T_C= 25°C
Operating Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R_thJC
R_thJA
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
500
8
32
8
510
13
20
0.85
125
150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
Value
1
62.5
Unit
°C/W
1/3
09/11/2012
COMSET SEMICONDUCTORS