IRF640 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

SEMICONDUCTORS
IRF640
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in high speed power switching, low
voltage, relay drivers and general purpose switching
applications.
DC-DC & DC-AC converters for telecom, industrial and lighting
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DS
I_DS
I_DM
I_AR
E_AS
E_AR
V_GS
R_DS(on)
P_T
t_J
t_stg
Drain-Source Voltage
Continuous Drain Current T_C= 37°C
Pulsed Drain Current T_C= 25°C
Avalanche Current, Limited by T_jmax
Avalanche Energy, Single pulse
I_D = 18 A, V_DD = 50 V, T_j = 25°C
Avalanche Energy, Periodic Limited by T_jmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T_C= 25°C
Operating Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R_thJC
R_thJA
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
200
18
72
18
280
13
20
0.18
125
150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
Value
1
62.5
Unit
°C/W
1/3
09/11/2012
COMSET SEMICONDUCTORS