IRF630 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

SEMICONDUCTORS
IRF630
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in high speed switching,
uninterruptible power supply, motor control, audio amplifiers,
industrial actuators.
DC-DC & DC-AC converters for telecom, industrial and
consumer environment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DS
I_DS
I_DM
I_AR
E_AS
E_AR
V_GS
R_DS(on)
P_T
t_J
t_stg
Drain-Source Voltage
Continuous Drain Current T_C= 37°C
Pulsed Drain Current T_C= 25°C
Avalanche Current, Limited by T_jmax
Avalanche Energy, Single pulse
I_D = 2.4 A, V_DD = 50 V, R_GS = 25 Ω, L= 56.3 µH, T_j = 25°C
Avalanche Energy, Periodic Limited by T_jmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T_C= 25°C
Operating Temperature
Storage Temperature range
Value
200
9
36
9
250
7.4
20
0.4
74
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
1.7
62
Unit
°C/W
01/10/2012
COMSET SEMICONDUCTORS
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