BUZ73A Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SEMICONDUCTORS
BUZ73A
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
This is an N-channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power.
This type can be operated directly from integrated circuits
and housed in a TO-220 envelope.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DS
V_SD
I_DS
I_DM
V_GS
R_DS(on)
P_T
t_J
t_stg
t_L
Drain-Source Voltage
Drain-Source diode Voltage
Continuous Drain Current T_C= 37°C
Pulsed Drain Current T_C= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T_C= 25°C
Operating Temperature
Storage Temperature range
Lead Temperature 1.6 mm from case for 10 seconde
Value
200
<1.7
5.5
22
20
0.6
40
-55 to +150
-55 to +150
300
Unit
V
V
A
A
V
Ω
Watts
°C
01/10/2012
COMSET SEMICONDUCTORS
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