BUZ31 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SEMICONDUCTORS
BUZ31
POWER MOS TRANSISTORS
FEATURE
• Nchannel
• Enhancement mode
• Avalanche-rated
• TO-220 envelope
• Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DS
I_DS
I_DM
I_AR
E_AR
E_AS
V_GS
R_DS(on)
P_T
t_J
t_stg
Drain-Source Voltage
Continuous Drain Current T_C= 37°C
Pulsed Drain Current T_C= 25°C
Avalanche Current, Limited by T_jmax
Avalanche Energy, Periodic Limited by T_jmax
Avalanche Energy, Single pulse
I_D = 14.5 A, V_DD = 50 V, R_GS = 25 Ω
L = 1.42 mH, T_j = 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T_C= 25°C
Operating Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
Thermal Resistance, chip case
Thermal Resistance, chip to ambient
Value
200
14.5
58
14.5
9
200
20
0.2
95
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
Value
<1.32
<75
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3