BUX80_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH
POWER TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control
systems applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CER
V_EBO
V_CES
I_C
I_CM
I_B
P_t
T_J
T_Stg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
R_BE = 50Ω
I_C = 0
V_BE = 0
t_p = 10ms
@ T_C = 40°
Value
400
500
10
800
10
15
5
100
150
-65 to +150
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
COMSET SEMICONDUCTORS
1/3