BUX80 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,100W)

NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH POWER
TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control systems
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CER
V_EBO
V_CES
I_C
I_CM
I_B
P_t
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
R_BE = 50Ω
I_C = 0
V_BE = 0
t_p = 10ms
@ T_C = 40°
Value
400
500
10
800
10
15
5
100
150
-65 to +150
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V_CEO(SUS)
V_CER
I_EBO
I_CES
Ratings
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
Emitter Cutoff Current
Collector Cutoff Current
Test Condition(s)
I_C=100 mA
I_C=100 mA , R_BE = 50Ω
V_CE=10 V , I_C=0
V_CE= V_CES , V_BE= 0
V_CE= V_CES , V_BE= 0, T_case = 125°C
COMSET SEMICONDUCTORS
Min Typ Mx Unit
400 - -
V
500 -
--
--
--
-
V
10 mA
1
3
mA
1/2