BUX41N Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

NPN BUX41N
HIGH CURRENT, HIGH SPEED,
HIGH POWER TRANSISTOR
The BUX41N is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_CEX
V_EBO
I_C
I_CM
I_B
P_t
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
I_E = 0
V_BE = -1.5 V
I_C = 0
t_p = 10ms
@ T_C = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
Value
160
220
220
7
18
25
3.6
120
200
-65 to +200
Unit
V
V
V
V
A
A
A
Watts
°C
°C
Value
1.46
Unit
°C/W
COMSET SEMICONDUCTORS
1/3