BUX39_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

NPN BUX39
HIGH CURRENT, HIGH SPEED, HIGH
POWER TRANSISTOR
The BUX39 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
V_CEX
I_C
I_CM
I_B
P_t
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
I_E = 0
I_C = 0
V_BE = -1.5V
t_p = 10ms
@ T_C = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
Value
90
120
7
120
30
40
6
120
200
-65 to +200
Unit
V
V
V
V
A
A
A
Watts
°C
°C
Value
1.46
Unit
°C/W
COMSET SEMICONDUCTORS
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