BUX12_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR

NPN BUX12
HIGH CURRENT, HIGH SPEED , HIGH
POWER TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3.
They are intended for use in switching and linear appications in military and industrial
equipment.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
V_CEX
I_C
I_CM
I_B
P_t
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
I_E = 0
I_C = 0
V_BE = -1.5V
t_p = 10ms
@ T_C = 25°
Unit
250
V
300
V
7.0
V
300
V
20
A
25
A
4
A
150
W
200
°C
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
COMSET SEMICONDUCTORS
1/3